An artist's rendition of Lieber group research, depicting an AFM probe comprised of a carbon nanotube modified with a biotin molecule, is on the cover of the Second Edition of the textbook Chemistry: A Molecular Approach (Prentice Hall, 2010), by Nivaldo Tro. For the original publication describing this research, see S.S. Wong, E. Joselevich, A.T. Woolley, C.L. Cheung and C.M. Lieber, "Covalently functionalized nanotubes as nanometer probes for chemistry and biology," Nature 394, 52-55 (1998).

Using a 'nanotectonic' approach that provides iterative control over nanowire nucleation and growth, kinked nanowires can be grown in which straight sections of controllable length are separated by triangular joints. This is a composite of a false-color scanning electron microscope image of a single multiply-kinked nanowire with a diameter of 80 nm and a segment length of 1 micron. Nature Nanotechnol. 4, 824-829 (2009) (cover)

Left: Schematic of a p-GaN/i-InxGa1-xN/n-GaN heterojunction nanowire for photovoltaics. Right: Solar cell performance of a series of nanowire devices with systematically tuned InGaN composition under 1-sun illumination. Nano Lett. 9, 2183 (2009)

In this work, we exploit the unique capability of the bottom-up approach to fabricate NWFET arrays on flexible and transparent plastic substrates and interface these ultra-sensitive devices with spontaneously beating embryonic chicken hearts. Furthermore, we demonstrate that these novel device arrays enable multiplexed signal recording in a number of conformations as well as registration of devices to the heart surface. Nano Lett. 9, 914-918 (2009)

Novel axial and radial nanowire photovoltaic elements seen emerging from a scanning electron micrograph of silicon core-shell nanowires. Chem. Soc. Rev. 38, 16-24 (2009) (inside front cover)

Schematic and SEM image of a wet-etched single silicon nanowire with two serially integrated p-i-n diodes. After etching, the diode and tunnel junctions are clearly delineated. From Nano Lett. 8, 3456 (2008) (Figure 1)

Optical injection from the CdS semiconductor nanowire into the photonic-crystal waveguide. Nature Photon. 2, 622-626 (2008)

(a) Schematic of multiple FET array on a single ultralong p-SiNW. (b) Dark-field optical image of multiple FETs defined by electron beam lithography. The p-SiNW is horizontal in the image and the vertical lines crossing the NW correspond to S/D electrodes. Nano Lett. 8, 3004-3009 (2008)

Ge/Si heterostructure nanowire transistors with sub-100 nm channel and integrated high-kappa gate dielectric operate near the ballistic limit, and provide the best p-type FET performance to date. TOC, Nano Lett. 8, 925-930 (2008)

Blown bubble film approach for preparation of large-scale nanodevice arrays on wafers or plastics. Cover, J. Mater. Chem. 18, 728-734 (2008)

Left: HRTEM of InAs/InP core/shell nanowire. Inset, cross-sectional schematic and corresponding band diagram. Right: Electron mobility of InAs/InP NW at different temperatures, the highest among reported 1D nanostructures. Nano Lett. 7, 3214-3218 (2007)

Ge/Si nanowire double dot device and demonstration of tunable interdot coupling. Fig.1, Nature Nanotechnol. 2, 622-625 (2007)

Left: Photograph of bubble expansion process. Upper right: 6-inch wafer scale blown bubble film containing uniform, well-aligned nanowires. Lower right: 8-inch wafer scale film containing ordered SWNTs. Nature Nanotech. 2, 372-377 (2007)

3D multifunctional electronics based on bottom-up multi-layer assembly of nanowires. Ten vertically stacked layers of Ge/Si core/shell multi-nanowire field effect transistors (FETs) were presented with uniform performance in sequential layers 1 through 10 of the 3D structure. Nano Lett. 7, 773-777 (2007)

Our silicon nanowire biosensor is on the cover of the Fifth Edition text, Chemistry: The Molecular Nature of Matter and Change, by Martin Silberberg. The cover image is designed by Michael Goodman. [larger image without type]

A hybrid structure consisting of a neuron with separate axon-nanowire (upper left branch) and dendrite-nanowire (upper right, lower left branches) interfaces demonstrates our ability to form multiple inputs and/or outputs to a single neuron. After stimulation at the soma (center), elicited signals can be measured at each of the cell-nanowire interfaces. Alternatively, the cell can be stimulated at the axon-nanowire interface with resulting signals measured at the two dendrite-nanowire connections. Science 313, 1100 (2006)

We show a single neuron (green), with an axon crossing an array of 50 nanowire devices (metallic contacts are yellow; individual nanowires are not visible) having 10 micron pitch. The speed, shape and time evolution of a signal can be mapped in real-time as it propagates along the axon. Individual nanowire elements can also be re-configured to simulate the axon or modulate an already propagating signal, providing our array with additional and unprecedented functionality. Science 313, 1100 (2006)

Left: A high angle annular dark field scanning transmission electron microscopy image of undoped GaN/AlN/AlGaN nanowire cross-section. Center: Schematic of top-gated nanowire field-effect transistor. Right: GaN/AlN/AlGaN nanowire heterostructure exhibits electron mobility of 3100 cm2/Vs at room temperature. Nano Lett. 6, 1468 (2006)

Top: Schematics of the nanowire photonic crystal with four engineered defects (left) and the nanowire racetrack microresonator (right). Bottom: Scanning electron microscope micrograph of the nanowire photonic crystal (left) and optical micrograph of the nanowire racetrack microresonator (right).

High frequency nanowire ring oscillators on glass. Top: Optical images of nanowire ring oscillators fabricated on glass, and corresponding circuit diagram. The patterned nanowire film appears white in the image. Bottom: 11.7 MHz oscillation from a nanowire ring oscillator on glass. Nature 434, 1085 (2005)

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